sep. 2001 FY6BCH-02 outline drawing dimensions in mm tssop8 mitsubishi nch power mosfet FY6BCH-02 high-speed switching use application li-ion battery, dc-dc converter, etc. 20 10 6 42 6 1.5 6.0 1.5 C 55 ~ +150 C 55 ~ +150 0.035 v gs = 0v v ds = 0v l = 10 h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 2.5v drive v dss .................................................................................. 20v r ds (on) (max) .............................................................. 30m ? i d ........................................................................................... 6a 3.0 0.275 0.65 1.1 6.4 4.4 ?? ???? ?? drain source gate ?? ? ? ?? ? ? ? ? ? ?
sep. 2001 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr mitsubishi nch power mosfet FY6BCH-02 high-speed switching use v a ma v m ? m ? v s pf pf pf ns ns ns ns v c/w ns 20 0.5 0.9 25 32 0.15 13.0 800 280 200 20 55 90 100 50 0.1 0.1 1.3 30 40 0.18 1.10 83.3 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 10v, v ds = 0v v ds = 20v, v gs = 0v i d = 1ma, v ds = 10v i d = 6a, v gs = 4v i d = 3a, v gs = 2.5v i d = 6a, v gs = 4v i d = 6a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 10v, i d = 3a, v gs = 4v, r gen = r gs = 50 ? i s = 1.5a, v gs = 0v channel to ambient i s = 1.5a, dis/dt = C 50a/ s performance curves 0 0.4 0.8 1.2 1.6 2.0 0 200 50 100 150 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 2 3 5 2 10 0 357 2 10 1 357 2 10 2 357 5 7 2 100s tw = 10s 100ms 1ms 10ms dc t c = 25 c single pulse power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 v gs = 5v p d = 1.5w t c = 25 c pulse test 4v 2v 1.5v 2.5v 3v 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 v gs = 5v p d = 1.5w t c = 25 c pulse test 4v 1.5v 2.5v 3v 2v
sep. 2001 mitsubishi nch power mosfet FY6BCH-02 high-speed switching use 10 C 1 10 0 23457 23457 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 2 ciss coss crss t c h = 25 c f = 1mh z v gs = 0v 10 0 10 1 23457 2345 5 7 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25 c 125 c 75 c v ds = 10v pulse test 0 4 8 12 16 20 0 1.0 2.0 3.0 4.0 5.0 t c = 25 c v ds = 10v pulse test 0 0.2 0.4 0.6 0.8 1.0 0 1.0 2.0 3.0 4.0 5.0 6a 3a i d = 12a t c = 25 c pulse test 0 20 40 60 80 100 10 C 1 2 10 0 357 2 10 1 357 2 10 2 357 t c = 25 c pulse test v gs = 2.5v 4v 10 C 1 10 0 23457 23457 10 1 10 1 2 2 3 4 5 7 10 2 2 3 4 5 7 t c h = 25 c v dd = 10v v gs = 4v r gen = r gs = 50 ? t d(off) t d(on) t r t f on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m ? ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
sep. 2001 mitsubishi nch power mosfet FY6BCH-02 high-speed switching use 0 1.0 2.0 3.0 4.0 5.0 0246810 v ds = 7v 15v 10v t c h = 25 c i d = 6a 0.4 0.6 0.8 1.0 1.2 1.4 C 50 0 50 100 150 v gs = 0v i d = 1ma 0 0.4 0.8 1.2 1.6 2.0 C 50 0 50 100 150 v ds = 10v i d = 1ma 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 t c = 125 c 75 c 25 c v gs = 0v pulse test 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 C 50 0 50 100 150 v gs = 4v i d = 6a pulse test gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch C a) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 C 4 23 57 10 C 3 23 57 10 C 2 23 57 10 C 1 23 57 10 0 23 57 10 1 23 57 10 2 23 57 10 3 d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse p dm tw d = t tw t
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